Effects of post-annealing on electrical properties of amorphous Ga-doped Zn-Sn-O semiconductor films

► a-GZTO films with a low Ga doping exhibit significant changes in their properties. ► The post-annealing resulted in reduction of subgap states of a-GZTO films. ► The Ga doping contributes to thermal stability of a-GZTO films.