کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7906008 | 1510751 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
III-Nitride multiple disk-in-wire laser structures: Effects of crystal orientation and spacer size
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Atomistic numerical simulations have been carried out to study the performance of recently reported optical structures based on nonpolar multiple disk-in-wire In0.08Ga0.92â¯N/GaN material system. The simulations are performed with an augmented version of the open-source NEMO 3-D software that uses a fully-atomistic valence force-field (VFF) for strain distributions and empirical sp3s*-spin tight-binding model to compute the electronic structure. Both linear and nonlinear components of internal polarization field have been included using a recently proposed first-principles based polarization model. When compared to conventional c-plane based polar structures, the nonpolar device exhibits a much weaker (yet non-zero) internal potential and improved laser emission characteristics. In particular, it is found that the optical transition probability is a strong function of the internal fields and could be tuned via engineering the spacer size.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 83, September 2018, Pages 104-110
Journal: Optical Materials - Volume 83, September 2018, Pages 104-110
نویسندگان
Mayada M. Taher, Shaikh S. Ahmed,