Ion-beam-induced surface modification of solution-derived indium-doped zinc oxide film for a liquid crystal device with stable and fast switching properties

The characteristics of a solution-derived indium-doped zinc oxide (In:ZnO) film exposed to ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer were investigated. Solution processing was conducted to deposit a thin layer on a substrate and irradiation at various IB irradiation energies was used as an LC alignment method, all of which achieved uniform and homogeneous LC alignment. Atomic force microscopy using three-dimensional imaging and numerical analyses showed that the IB irradiation reduced the surface roughness. Through the X-ray photoelectron spectroscopy, it was revealed that the modification of the chemical composition due to the IB irradiation affected the state of the LC alignment. Increased polarizability of the surface and oxygen vacancies induced strong van der Waals forces between the In:ZnO film surface and the LC molecules, thereby subsequently achieving uniform and homogeneous LC alignment. The electro-optical (EO) characteristics of a twisted-nematic cell made with IB-irradiated In:ZnO film at an IB irradiation energy of 2200 eV, with which outstanding EO performance was observed. Therefore, using the solution-derived In:ZnO film with the IB irradiation as an alignment shows remarkable potential for use in LC device.