Energy structure and optical response of multi-hilled GaAs quantum ribbon under crossed electric and magnetic fields

The properties of the electron spectrum in non-uniform single- and multi-hilled semiconductor quantum ribbons are theoretically investigated taking into account the presence of externally applied electric and magnetic fields. The calculation is carried out within the effective mass and parabolic band approximations, using an adiabatic approach combined with a diagonalization scheme with the GaAs as the prototype material. The features of the Aharonov-Bohm oscillations in the structure, and the effect of the changes in the geometry and in the applied electric field onto the optical absorption and refractive index change are discussed. The phenomenon of electric-field-induced optical transparency is revealed and discussed.