کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7906628 | 1510755 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots Strain-engineering of GaInAsSb overgrown layers and its effects on the optical properties of InAs/GaAs quantum dots](/preview/png/7906628.png)
چکیده انگلیسی
The effect of antimony incorporation in In0.11Ga0.89As overgrown layers on the optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy has been studied. The results of photoluminescence, high resolution X-ray diffraction, atomic force microscopy, power and temperature-dependent photoluminescence from 77â¯K to 300â¯K have been correlated to characterize the grown samples. The wavelength emission increases with Sb content, and it reaches â¼1367â¯nm and does not increase further because of Sb incorporation's saturation in the In0.11Ga0.89As layer. To redshift further the wavelength to 1432â¯nm, a reduction of the growth temperature of the In0.11Ga0.89As1-ySby layer from 500â¯Â°C to 440â¯Â°C was necessary. This achievement is accompanied by the transformation of the QDs distribution to 2 QDs families. The extracted activation energies suggest that the PL quenching is mainly attributed to the thermal transfer of carriers in the QDs to the higher energy levels in the defects located within the In0.11Ga0.89As1-ySby SRLs. The variation of PL FWHM with temperature was interpreted by carrier thermalization and capture among different QDs within the same QD family or between small and large QD families.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 79, May 2018, Pages 200-205
Journal: Optical Materials - Volume 79, May 2018, Pages 200-205
نویسندگان
A. Salhi, S. Alshaibani, Y. Alaskar, H. Albrithen, A. Albedri, A. Alyamani,