کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7906674 1510754 2018 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells
چکیده انگلیسی
Nowadays, the advanced photon management is regarded as an area of intensive research investment. Ever since the most widely used commercial photovoltaic cells are fabricated with single gap semiconductors like silicon, photon management has offered opportunities to make better use of the photons, both inside and outside the single junction window. In this study, the impact of new down shifting layer on the photoelectrical parameters of silicon based solar cell was studied. An effort to enhance the photovoltaic performance of textured silicon solar cells through the application of porous SiC particles-doped polyvinyl alcohol (PVA) layers using the spin-coating technique, is reported. Current-voltage curves under artificial illumination were used to confirm the contribution of LDS (SiC-PVA) thin layers. Experiment results revealed that LDS based on SiC particles which were etched in HF/K2S2O8 solution at T = 80 °C under UV light of 254 nm exhibited the best solar cell photoelectrical parameters due to its strong photoluminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 80, June 2018, Pages 225-232
نویسندگان
, , , , , , , , , , , , , , , , ,