کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7909083 | 1510788 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The role of operations after the deposition on the performance of SiOx films in optoelectronics devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The role of operations after the deposition on the performance of SiOx films in optoelectronics devices The role of operations after the deposition on the performance of SiOx films in optoelectronics devices](/preview/png/7909083.png)
چکیده انگلیسی
In this study, we have investigated phase separation, silicon Nano crystal (Si-NC) formation and optoelectronics properties of Si oxide (SiOx, 0.7 < x < 1.3) films in high-vacuum annealing and ion bombardment conditions. The SiOx films were deposited by physical vapor deposition (PVD). The internal structure properties of these films were the main factor in applications of optoelectronic. Possible changes in the structure, composition and electro physical properties were investigated by FTIR and TEM spectroscopy. The measurements show that SiOx film is the dominant phase in the ultra-thin layer. Also, high-temperature annealing ion bombardment results in further increase of the phase separation of the whole layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 46, August 2015, Pages 223-227
Journal: Optical Materials - Volume 46, August 2015, Pages 223-227
نویسندگان
Meysam Zarchi, Shahrokh Ahangarani,