کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7921496 | 1511749 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
N-type organic field effect transistors based on naphthalene tetracarboxylic diimides derivatives containing halogen elements
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Naphthalene tetracarboxylic diimides (NDIs) derivatives, functionalized with p-fluorophenyl (NDI-FAN), p-chlorophenyl (NDI-ClAN), p-fluorobenzyl (NDI-FBN), were synthesized and used to fabricated organic field effect transistors (OFETs) through vacuum evaporation. All materials display high decomposition temperature and low LUMO energy level facilitating air stable electron transport. OFETs devices based on N-octadecylphosphonic acid (ODPA) treated SiO2/Si substrate affords electron mobility up to 1.8â¯Ãâ¯10â1â¯cm2vâ1sâ1 with high on/off ratio of 6.7â¯Ãâ¯103 in air. Replaced the p-fluorophenyl by p-fluorobenzyl also leads to a comparable mobility reaching 1.1â¯Ãâ¯10â1â¯cm2vâ1sâ1 with a low threshold voltage of 1.8â¯V. Microstructure and morphology of thin films were investigated to shed light on the reason for distinct electrical performance. These results demonstrate that fluorinated N-substituent is an alternative method to optimize molecular arrangement and device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 214, 1 August 2018, Pages 260-264
Journal: Materials Chemistry and Physics - Volume 214, 1 August 2018, Pages 260-264
نویسندگان
Yue Peng, Zhefeng Li,