Effect of annealing time on Si/SiO2 interface property for CMOS fabricated on hybrid orientation substrate with ATR method

▶ The ATR'd material quality of HOT wafer depends on time of defect-removal anneal. ▶ ATR-induced defects are repaired further by longer defect-removal anneal. ▶ Better Si/SiO2 interface of nMOSFETs achieves using modified annealing treatment. ▶ The modified annealing treatment would not affect characteristics of pMOSFETs.