Electrical performance and thermal stability of MIC poly-Si TFTs improved using drive-in nickel induced crystallization

▶ A new manufacturing method for poly-Si TFTs using drive-in Ni induced crystallization (DIC) was proposed to replace Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si). ▶ In DIC, F+ implantation was used to drive Ni in the α-Si layer. ▶ It was found that the electrical performance (especially leakage current) and thermal stability of DIC-TFTs were improved.