کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7924071 1511937 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of high purity nano-silicon powders by direct current arc plasma evaporation method
ترجمه فارسی عنوان
آماده سازی پودرهای نانو سیلیکون با خلوص بالا با روش تبخیر پلاسما با قوس مستقیم
کلمات کلیدی
پودر نانو سیلیکون، تبخیر پلاسما جریان مستقیم قوس مستقیم، میانگین قطر ذرات، بازده، مکانیزم تخلیه،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
Direct current arc plasma evaporation method was used in this paper for the industrial preparation of high purity and highly-dispersed nano-silicon powders and the development its high-tech nano products. The influence of cathode current, filling pressure, pressure ratio of Hydrogen to Argon (PH2/PAr) on the particle size and the yield of nano-silicon powders was studied by orthogonal design method in experiment. The evaporation mechanism was also discussed in this paper. The results showed that high purity of 99.93 wt% was achieved with near spherical shape and cubic crystal structure. The average particle size of nano-silicon powders produced in the process in this paper ranged from 35 nm to 63 nm with the yield of 9.2 g h−1-175.2 g h−1. The mechanism of silicon powders evaporation was discussed in the paper, which led to the findings of high yield attributed to the co-existence of molecular evaporation and boiling evaporation coexist.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 229, March 2018, Pages 6-12
نویسندگان
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