کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7935012 1513048 2018 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
Advanced characterization and in-situ growth monitoring of Cu(In,Ga)Se2 thin films and solar cells
چکیده انگلیسی
The continuous improvement of Cu(In,Ga)Se2 (CIGSe) solar cells relies considerably on advanced characterization of individual layers in the solar-cell stacks as well as of completed CIGSe devices. The present contribution provides an overview of corresponding efforts performed by various research groups at Helmholtz-Zentrum Berlin für Materialien und Energie GmbH. In-situ growth monitoring of CIGSe absorber layers by means of energy-dispersive X-ray spectrometry and light scattering is described, as well as structural analyses by means of X-ray and neutron diffraction. In addition, the characterization of surfaces and interfaces by soft X-ray and electron spectroscopy, the microscopic analysis by means of correlative electron microscopy, and optoelectronic characterization by optical spectroscopy are highlighted. The present contribution shows which substantial efforts in a research network are necessary in order to obtain deeper insight into materials properties and potentially limiting factors for the device performance, as well as to be able to control these factors during the solar-cell production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 170, August 2018, Pages 102-112
نویسندگان
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