کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7935384 | 1513054 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Efficiency improvement of Si quantum dot solar cells by activation with boron implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
The activation of Si quantum dots (QDs) in general Si QD heterojunction solar cells fabricated by the co-deposition of Si and B is typically not effective, as a high concentration of B is required for effective activation. In order to address this issue, B atoms were injected by ion implantation after the formation of Si QDs in a SiO2 matrix. A Si QD solar cell was successfully realized when a Si QD layer was activated by the implantation of B ions followed by an annealing step. As a result, the power conversion efficiency of a Si QD solar cell realized by the ion implantation of B increased from 13.17% to 13.92%. The open-circuit voltage also increased from 523.03â¯mV to 529.64â¯mV in the Si QD solar cell created with the ion implantation of B.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 164, April 2018, Pages 89-93
Journal: Solar Energy - Volume 164, April 2018, Pages 89-93
نویسندگان
Gyea Young Kwak, Tae Gun Kim, Songwoung Hong, Ansoon Kim, Man Hyo Ha, Kyung Joong Kim,