Structure and properties of SnS thin layers obtained by sulfurization of electrodeposited tin precursors

By a simple reducing the thickness of the Sn film precursors we can produce by this method desirable for the nanophotovoltaics very thin tin sulfide layers up to attached to the substrates SnS quantum dots with high visible optical absorption coefficients, which band structure can be modified and blue shifted to higher energy by the quantum confinement.