کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938137 | 1513108 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling of the surface sulfurization of CIGSe-based solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
The modeling of the effect of absorber surface sulfurization on state-of-the-art CIGSe-based solar cells is studied using the 1 dimensional modeling tool SCAPS 3.2. The evolution of the photovoltaic performance of the cell is modeled for different sulfur contents and sulfurization depth; these parameters are simultaneously varied to obtain a representation of the ideal conditions which maximize the solar cell efficiency. Different interface defect types are considered and the influence of the S atoms on the interface defects activation energy, as well as on the majority carrier concentration in the CIGSe film, is taken into account in our model. Most of the modeling parameters are determined from in-house measurements, especially concerning the evolution of the interface defects with the surface sulfurization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 110, December 2014, Pages 50-55
Journal: Solar Energy - Volume 110, December 2014, Pages 50-55
نویسندگان
Zacharie Jehl Li Kao, Taizo Kobayashi, Tokio Nakada,