Investigation and study of the electrical characteristics of anodic oxide films SiO2 annealed at various temperatures

The anodic silica films were produced by anodization of monocrystalline silicon wafers in pure water in an electrolysis cell (P.T.F.E), with a constant current density of 20 μA/cm2. All anodizations are performed at room temperature. During oxidation film thickness increases linearly as a function of total charge. Films were annealed under nitrogen atmosphere at various temperatures (600, 800 and 1050 °C). MOS capacitors with anodic oxides were elaborated. This study deals to the determination of interface states density Si/SiO2 and the study of electronic conduction. Using static, quasi-static, C(V), G(ω) measurements, we have determined the interface states density, fixed charges density for annealed oxides at various temperatures. The conduction mechanism was determined with I(V) measurements.