Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach

We demonstrate that bottom-up grain boundary engineering strategies based on atomic layer deposition could be introduced to design and control grain boundary in atomic-level. As an initial attempt, ultrathin ZnO layer with precise controlled thickness was introduced at the BTS grain boundary to investigate the chemical composition and structure of grain boundary related electron/phonon transportation behavior.354