Realization of interdigitated back contact silicon solar cells by using dopant-free heterocontacts for both polarities

Solution-processed PEDOT:PSS/n-Si heterojunction IBC solar cells have been successfully fabricated by our innovatively buried electron transport layer (ETL) method. An experimental efficiency exceeding 16.3% has been obtained through utilizing a 1 nm thick MgOx film as ETL. With the help of simulation, efficiency higher than 22% is readily achievable once the surface recombination rate of ETL(SETL) can be well controlled below 100 cm/s.299