Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nano Energy - Volume 49, July 2018, Pages 634-643

Zegao Wang, Qiang Li, Haoxiang Xu, Christian Dahl-Petersen, Qian Yang, Daojian Cheng, Dapeng Cao, Flemming Besenbacher, Jeppe V. Lauritsen, Stig Helveg, Mingdong Dong,