Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV-vis-IR photodetectors

Highly crystallized bilayer MoTe2/MoS2 p-n heterojunctions with advanced photoresponsivity are for the first time synthesized by a single-run chemical vapor deposition method. The photodetectors exhibit a tremendous photoresponsivity as 4.71 A/W and an external quantum efficiency (EQE) as 532% at 1100 nm, while 4.67 A/W and 1935% at 300 nm, which are one to two orders of magnitude higher than other transition-metal dichalcogenides (TMDs) heterostructures reported so far.181