کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7956360 | 1513835 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principle study of structural, electronic and optical properties of Cu2FeSnS4 semiconductor
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: First-principle study of structural, electronic and optical properties of Cu2FeSnS4 semiconductor First-principle study of structural, electronic and optical properties of Cu2FeSnS4 semiconductor](/preview/png/7956360.png)
چکیده انگلیسی
The Cu2FeSnS4 semiconductor with its stannite structure represents one of the most promising candidates for the photovoltaic devices. For this purpose, we address this work to study their structural, electronic and optical properties using the Density Functional Theory. The generalized gradient approximation showed that this material exhibits a half-metallic behavior, with an optimal band gap value obtained by the generalized gradient approximation with the modified Becke-Johnson correction GGA-mBJ. The optical properties showed a good optical absorption and conductivity in the visible range. Thus, a good optical band gap is obtained, confirming its applicability as an absorber layer in photovoltaic solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Condensed Matter - Volume 16, September 2018, e00321
Journal: Computational Condensed Matter - Volume 16, September 2018, e00321
نویسندگان
Fatimazahra Nainaa, Hamid Ez-Zahraouy,