کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7956722 | 1513837 | 2018 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energetic consideration of defected rhenium disilicide, ReSi2-x, and the electronic structure of Re4Si7 (ReSi1.75), revisited
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In order to re-evaluate the proposed models for the crystal structure of defected rhenium disilicide, ReSi2-x, their electronic energies have been calculated based on their modelled structures, and the model proposed by Harada et al. ãPhil. Mag. 91 (2011) 3108-27ãwas found to be the most plausible. Though its electronic densities of states calculated showed clear energy bandgap in which its Fermi level was just located, the band structure calculated had a slight overlap of the valence bands and the conduction bands, which could not fully explain the observed semiconducting nature of ReSi2-x. Possibility of Anderson insulation due to randomized Si-vacancies was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Condensed Matter - Volume 14, March 2018, Pages 167-175
Journal: Computational Condensed Matter - Volume 14, March 2018, Pages 167-175
نویسندگان
Yoji Imai, Atsushi Yamamoto,