Comparative modeling results for ridge waveguide MQW and hybrid Si/III-V lasers

In this study, 1550 nm ridge waveguide multi quantum well (MQW) and hybrid Si/III-V lasers are simulated and the results are studied in a comparative setting. InGaAsP active layers with a ridge waveguide length of 500 μm and width of 5 μm with six quantum wells are chosen for both MQW and hybrid Si/III-V lasers. The hybrid Si/III-V laser structure is obtained by integration of a ridge waveguide MQW semiconductor laser with a silicon-on-insulator (SOI) chip. The proposed structure allows laser mode to experience maximal gain available in the III-V region while maintaining a high coupling efficiency to Si-waveguide. The results demonstrate that the optical power generated by MQW active layer can be transferred to the silicon waveguide of the hybrid Si/III-V laser. In addition, an increase in the threshold current and degeneration in the frequency response of the hybrid laser are observed compared to the MQW one. The results also indicate that there is not a big difference between the ridge waveguide MQW and the hybrid Si/III-V lasers in terms of spectrum and spontaneous emission characteristics.