A compositional gradient Ce1−xZrxO2 buffer architecture for producing high-performance YBCO film

In this work, YBCO films were epitaxially grown on Ce1−xZrxO2 (CZO) buffered yttria stabilized zirconia (YSZ) single crystal substrates through a fluorine-free sol-gel process. The influence of two different CZO buffer architectures on the microstructure and superconducting properties of YBCO films was investigated. According to XRD results in combination with (S)TEM analysis, it was confirmed that YBCO film grown on the gradient CZO buffer layer (CZO-G) exhibits better in-plane and out-of-plane texture than YBCO film deposited on the uniform CZO buffer layer (CZO-20). And besides, the superconducting performances especially the current-carrying capacity under magnetic field of the former was much higher than that of the latter, which means that the enhanced flux pinning force will be presented in YBCO film on CZO-G buffer layer. The maximum pinning force of the YBCO film grown on CZO-G buffer architecture is up to 17.67 GN/m3 @ 65 K. HR-STEM analysis shows that the stacking faults within YBCO matrix gave rise to the considerable nanoscale lattice-strains which may suppress the formation of Copper pairs and produce nanoscale non-superconducting regions served as pinning centers to significantly improve the flux pinning performance of YBCO film. Given the above, it has been implied that high-performance YBCO coated conductor can be developed by using a compositional gradient Ce1−xZrxO2 films as buffer architecture.