کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7969557 | 1514352 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Revisit the stress-orienting effect of θ' in Al-Cu single crystal during stress aging
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Revisit the stress-orienting effect of θ' in Al-Cu single crystal during stress aging Revisit the stress-orienting effect of θ' in Al-Cu single crystal during stress aging](/preview/png/7969557.png)
چکیده انگلیسی
Three-dimension precipitation distribution of θ'-precipitates was established to revisit the stress-orienting effect of θ'-phase in Al-Cu single crystal during stress aging, via determining the microstructure observed along two different ã001ãAl zone axes. The results show that the θ'-precipitates prefer to precipitate on the habit planes parallel to the loading orientation, rather than the habit planes perpendicular to the loading orientation proposed in current views. Two opposite models of the stress-orienting effect on θ'-phase are compared and discussed in detail. They show the same aligned θ'-precipitate structure while observed perpendicular to the loading direction (i.e. [100]Al or [010]Al). The crucial difference actually lies in the microstructure observed along the loading orientation (i.e. [001]Al), which shows an increasing tendency in the number density of θ'-precipitates with increasing applied stress. This result further proves that the θ'-precipitates prefer to precipitate on the habit planes parallel to the loading orientation. In addition to the aligned θ'-precipitate structure, the fact that the number density of θ'-precipitates is increasing can be also treated as the other sign of the stress-orienting effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Characterization - Volume 135, January 2018, Pages 270-277
Journal: Materials Characterization - Volume 135, January 2018, Pages 270-277
نویسندگان
Jiqiang Chen, Yunlai Deng, Xiaobin Guo,