In-situ TEM/heavy ion irradiation on ultrafine-and nanocrystalline-grained tungsten: Effect of 3Â MeV Si, Cu and W ions

Bright-field TEM micrographs and defect densities of UF and NC tungsten grains irradiated with a) Si+ 2 at 1.03 dpa: 1) 140 nm - 7.2 × 10− 3 defects/nm2, 2) 122 nm - 6.9 × 10− 3 defects/nm2, 3) 63 nm - 4.7 × 10− 3 defects/nm2, and 4) 367 nm - 6.4 × 10− 3 defects/nm2; b) Cu+ 3 to 3.79 dpa: 1) 228 nm - 4.3 × 10− 3 defects/nm2; 2) 202 nm - 5.9 × 10− 3 defects/nm2; and 3) 137 nm - 6.1 × 10− 3 defects/nm2; and c) W+ 4 to 5.72 dpa: 1) 372 nm - 2.3 × 10− 3 defects/nm2 and 2) 128 nm - 4.5 × 10− 3 defects/nm2.154