کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7976168 1514692 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Spall behaviors of high purity copper under sweeping detonation
ترجمه فارسی عنوان
رفتارهای پاره ای از مس با کیفیت بالا تحت انفجار فراگیر
کلمات کلیدی
انفجار مکرر، خراب کردن، مرز دانه عامل تیلور، مس خلوص بالا،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
چکیده انگلیسی
Suites of sweeping detonation experiments were conducted to assess the spall behavior of high purity copper samples with different heat treatment histories. Incipient spall samples were obtained at different sweeping detonation condition. Metallographic and Electron Backscattered Diffraction (EBSD) analyses were performed on the soft-recovered samples. The effects of grain boundaries, grain size, crystal orientation and loading direction on the spall behaviors were discussed. Spall plane branching was found in the main spall plane of the damage samples. For similar microstructure, the area of voids increase with the increase of shock stress, and the coalescence of voids also become more obvious. Results from EBSD analysis show that the grain sizes were decreased and the grains were elongated along the direction of the plate width. Triple junctions composed of two or more general high angle boundaries are the preferred locations for intergranular damage. Voids prefer to nucleate in the grain boundaries composed of grain with high Taylor Factor (TF) than other grains. The damage areas in the grains with high TF are more severe. Boundaries close to perpendicular to the loading direction are more susceptible to void nucleation than the boundaries close to parallel to the loading direction, but the difference of voids nucleated in these two boundaries is less significant than the results obtained by plate impact experiment. It would be caused by the obliquity between the shock loading direction and the plate normal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 651, 10 January 2016, Pages 636-645
نویسندگان
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