کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7987941 | 1515532 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electronic structure of the Cs/n-GaN nano-interface has been studied in situ via synchrotron-based photoelectron spectroscopy by excitation in the energy range of 70-400â¯eV. The GaN sample was grown by an original method of epitaxy of low-defect unstressed nanoscaled films on AlGaN/SiC/Si substrate. Changes in the surface state spectra and in the Ga 3d, Cs 4d, Cs 5p, N 1s core level spectra have been revealed under different cesium coverages. The intrinsic surface states for the clean GaN surface at binding energies of â¼5.0â¯eV and â¼7.0â¯eV are attenuated during Cs adsorption. Simultaneously three Cs induced surface states are found to arise. Drastic changes in the surface state spectrum were ascertained and shown to be originated from the local interacting Ga dangling bonds and adsorbed Cs atoms initiating the electron redistribution effect with formation of the semiconductor-like Cs/n-GaN interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 271, March 2018, Pages 6-10
Journal: Solid State Communications - Volume 271, March 2018, Pages 6-10
نویسندگان
G.V. Benemanskaya, S.Ð. Kukushkin, P.A. Dementev, M.N. Lapushkin, S.N. Timoshnev, D.V. Smirnov,