کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7987964 | 1515532 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunable Gunn oscillations in a top-gated planar nanodevice
ترجمه فارسی عنوان
نوسانات کانونی قابل تنظیم در نانوساختار مسطح بالا
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
چکیده انگلیسی
The frequency of a Gunn diode is usually determined by the length of its oscillation channel, hard to be change after the device has been fabricated. We show that in a top-gated planar nanodevice the frequency of Gunn oscillations can be conveniently increased, i.e. tuned by the top-gate bias. Ensemble Monte Carlo (EMC) simulations indicate that the achieved maximum frequency reaches 1â¯THz, about three times of that of an un-gated device. Moreover, the tunable frequency-range also increases with the length of the top-gate, resulting in a widest range of â¼0.7â¯THz. Detailed analysis of the Gunn-domain dynamics shows that this tunable effect is related to the simultaneous formation of multi-domains, which are excited by the top-gate induced non-uniformed electricfield along the oscillation channel.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 271, March 2018, Pages 85-88
Journal: Solid State Communications - Volume 271, March 2018, Pages 85-88
نویسندگان
Jin-Tao Pan, Yue Wang, Kun-Yuan Xu, Jian-Wen Xiong, Zhi-Lie Tang,