کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7988028 | 1515533 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip](/preview/png/7988028.png)
چکیده انگلیسی
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 270, February 2018, Pages 151-154
Journal: Solid State Communications - Volume 270, February 2018, Pages 151-154
نویسندگان
Zhenhua Wu, Kun Luo, Jiahan Yu, Xiaobo Wu, Liangzhong Lin,