کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7988079 | 1515534 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (Eâ¥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by Eâ¥. The band gap shows linear variation with E⥠and its maximum of 0.69 eV is observed when E⥠is 0.4V/Ã
. The InSe/BP experiences a transition from semiconductor to metal with E⥠of â0.6 and 0.8V/Ã
. The band offsets are also modulated by Eâ¥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under Eâ¥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 269, January 2018, Pages 112-117
Journal: Solid State Communications - Volume 269, January 2018, Pages 112-117
نویسندگان
Yi-min Ding, Jun-jie Shi, Min Zhang, Congxin Xia, Meng Wu, Hui Wang, Yu-lang Cen, Shu-hang Pan,