کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7988079 | 1515534 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electric field modulation of electronic structures in InSe and black phosphorus heterostructure Electric field modulation of electronic structures in InSe and black phosphorus heterostructure](/preview/png/7988079.png)
چکیده انگلیسی
The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (Eâ¥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by Eâ¥. The band gap shows linear variation with E⥠and its maximum of 0.69 eV is observed when E⥠is 0.4V/Ã
. The InSe/BP experiences a transition from semiconductor to metal with E⥠of â0.6 and 0.8V/Ã
. The band offsets are also modulated by Eâ¥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under Eâ¥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 269, January 2018, Pages 112-117
Journal: Solid State Communications - Volume 269, January 2018, Pages 112-117
نویسندگان
Yi-min Ding, Jun-jie Shi, Min Zhang, Congxin Xia, Meng Wu, Hui Wang, Yu-lang Cen, Shu-hang Pan,