کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7988125 1515555 2016 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing
چکیده انگلیسی
The effect of pressure employed during subsequent annealing of the Ge+-ion implanted SiO2 layers on the Ge nanocrystal formation was studied. Ge+ ions implanted in the thin SiO2 layers formed Gauss-like profiles with a Ge peak concentration varied from 1 to 12 at%. Subsequent annealing was carried out at temperature 600-1130 °C under pressures 1-1.2×104 bar. Strong effect of the pressure on the Ge atom distribution was obtained. High-temperature annealing under pressure within the range of 1-103 bar resulted in the out-diffusion of germanium from the SiO2 layer to the Si substrate. As the pressure reached 1.2×104 bar, Ge migration to the Si/SiO2 interface was prevented. At that, the Ge nanocrystal growth within the ion-implanted region of the SiO2 film took place. The nanocrystal size was investigated as a function both of the Ge atom concentration and the annealing temperature. The obtained results show a diffusion-controlled nanocrystal growth mechanism. The high-pressure (1.2×104 bar) diffusion coefficient of germanium in silicon dioxide was estimated as a function of the temperature and expressed by D=1.1×10−10 exp(−1.43 eV/kT) cm2/s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 247, December 2016, Pages 53-57
نویسندگان
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