کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7988125 | 1515555 | 2016 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
The effect of pressure employed during subsequent annealing of the Ge+-ion implanted SiO2 layers on the Ge nanocrystal formation was studied. Ge+ ions implanted in the thin SiO2 layers formed Gauss-like profiles with a Ge peak concentration varied from 1 to 12 at%. Subsequent annealing was carried out at temperature 600-1130 °C under pressures 1-1.2Ã104 bar. Strong effect of the pressure on the Ge atom distribution was obtained. High-temperature annealing under pressure within the range of 1-103 bar resulted in the out-diffusion of germanium from the SiO2 layer to the Si substrate. As the pressure reached 1.2Ã104 bar, Ge migration to the Si/SiO2 interface was prevented. At that, the Ge nanocrystal growth within the ion-implanted region of the SiO2 film took place. The nanocrystal size was investigated as a function both of the Ge atom concentration and the annealing temperature. The obtained results show a diffusion-controlled nanocrystal growth mechanism. The high-pressure (1.2Ã104 bar) diffusion coefficient of germanium in silicon dioxide was estimated as a function of the temperature and expressed by D=1.1Ã10â10 exp(â1.43 eV/kT) cm2/s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 247, December 2016, Pages 53-57
Journal: Solid State Communications - Volume 247, December 2016, Pages 53-57
نویسندگان
Ida E. Tyschenko, Vladimir A. Volodin, Alexander G. Cherkov,