کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7988333 | 1515816 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of solution and aging treatment on the microstructure and tensile properties of SiCf/C/Mo/Ti2AlNb composites
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SiCf/C/Mo/Ti2AlNb composites were prepared by foil-fiber-foil (FFF) method and are used as model system to study the effect of solution-ageing treatments on the interface and mechanical properties of SiC fiber-reinforced TiAl-matrix composites. By contrast, SiCf/C/Ti2AlNb composites were prepared and heat treated under the same process parameters. The interfacial microstructures of the as-prepared and heat treated composites were investigated by means of scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). Tensile strength tests of the composites were carried out at room temperature. So the effect of C/Mo duplex coated SiC fibers on the microstructure and tensile behavior of the composites was studied. The results reveal that the interfacial thermal stability and integrity of the SiCf/C/Mo/Ti2AlNb composites are much better than those of the SiCf/C/Ti2AlNb composites, as the C/Mo duplex coating can reduce the formation of brittle α2-phase and relieve the interfacial thermal residual stresses in SiCf/Ti2AlNb composites compared with C single coating. After the 1080â¯Â°C/1â¯h/850â¯Â°C/20â¯h heat treatment, the matrix of the SiCf/C/Mo/Ti2AlNb composite transformed into mainly B2+O homogenous mixture and a small amount of α2 phase, and the tensile strength of the composite was tested, which shows that the tensile properties of the composite was maintained after the solution-ageing treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 95, April 2018, Pages 33-39
Journal: Intermetallics - Volume 95, April 2018, Pages 33-39
نویسندگان
X. Luo, J.J. Xu, Y.Q. Wang, Y.Q. Yang, M.A. Umer, S.Q. Zhang,