Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties

► Cu3Ge formation is researched as an alternative metal for interconnect technology. ► The process window of Cu3Ge formation by exposing Cu to GeH4 has been mapped. ► The reaction occurs through a selective catalytic decomposition. ► An in situ plasma CuO oxide clean step prior to GeH4 exposure is mandatory. ► Stoichiometric Cu3Ge was made on 300 mm wafers at BEOL compatible temperatures.