کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
800435 1467502 2011 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A numerical investigation of porous titanium as orthopedic implant material
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی مکانیک
پیش نمایش صفحه اول مقاله
A numerical investigation of porous titanium as orthopedic implant material
چکیده انگلیسی

Porous titanium is being developed as an alternative orthopedic implant material to alleviate the inherent problems of bulk metallic implants by reducing the stiffness to be comparable to bone stiffness and allowing complete bone ingrowth. However, a porous microstructure is susceptible to local permanent plastic strain and residual stress under cyclic loading which reduces damage tolerance and therefore limits their application as orthopedic implants. The mechanical properties of porous titanium are governed by the microstructural configurations such as pore morphology, porosity, and bone ingrowth. To understand the influence of these features on performance, the macroscopic and microscopic responses of porous Ti are studied using three-dimensional finite element models. The models are generated based on simulated microstructures of experimental materials at porosities of 15%, 32% and 50%. The results show the effect of porosity and bone ingrowth on Young’s modulus, yield stress, and microscopic stress and strain distribution. Importantly, simulations predict that the bone ingrowth reduces the stress and strain localization under cyclic loading so significantly that it counteracts the concentration condition caused by the increased porosity of the structure.


► Porous titanium is used as bone implant material.
► Intensive plastic bands connect closely located large pores.
► Bone ingrowth relieves the concentration of the plastic strain.
► Highly porous implant materials should consider a composite microstructure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mechanics of Materials - Volume 43, Issue 8, August 2011, Pages 420–430
نویسندگان
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