Passivation of yellow luminescence of MOCVD grown InGaN/GaN heterostructures by Nitrogen - ion implantation

The effect of Nitrogen - ion implantation and post annealing treatment on Metal Organic Chemical Vapor Deposited (MOCVD) InGaN/GaN heterostructured samples were studied using structural, optical, morphological and electrical characterizations. Three samples with various implantation dosage (1 × 1015, 3 × 1015 and 5 × 1015 ions/cm2) has been studied. A clear increase in crystallinity was observed for post annealed implanted samples from HRXRD. The roughness of the sample increases from 1.3 nm to 5.8 nm when fluency of N - ion increases but is reduced after annealing. The PL spectra for our ion implanted sample shows that there is a remarkable suppression of the YL bands (∼500 nm-650 nm) as the dosage of ions are increased due to the passivation of the YL centers. Hall Effect Measurement shows N+ implanted samples offers high resistance which is reduced on annealing.