کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039205 | 1518600 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanical properties and structure evolution of single-crystalline silicon irradiated by 1â¯MeV Au+ and Cu+ ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Mechanical and structural evolutions of single-crystalline silicon irradiated by a series of doses 1â¯MeV Au+ ions and Cu+ ions are characterized by Surface laser-acoustic wave spectroscopy by (LA wave), Rutherford backscattering spectrometry and channeling (RBS/C) and transmission electron microscopy (TEM). The behavior of implanted Au+ and Cu+ ions was also simulated by using Stopping and range of ions in matter (SRIM) software package, respectively. It is demonstrated that LA wave and RBS could be applied for accurate evaluation of the TEM observed amorphous layer's thickness. The modified mechanical properties depend on the species and the dose of implantation. For 1â¯MeV Au+ ions, the threshold dose of completely amorphous is 5â¯Ãâ¯1014â¯atoms/cm2, while the one for Cu+ ions is 5â¯Ãâ¯1015â¯atoms/cm2. Upon completely amorphous, the young's modulus and layer density decreased significantly while saturated with the dose increasing sequentially.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 423, 15 May 2018, Pages 75-81
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 423, 15 May 2018, Pages 75-81
نویسندگان
Wei Liang, Fei Zhu, Yunhan Ling, Kezhao Liu, Yin Hu, Qifa Pan, Limin Chen, Zhengjun Zhang,