Growth and characterization of Pt-Si droplets for silicon nanowires synthesis

The formation of platinum silicide phases as a function of the annealing temperature was investigated using in-situ real-time Rutherford backscattering spectrometry. The in-situ real-time RBS revealed the reaction of platinum and silicon to start at about 220 °C to form platinum silicide phases, Pt2Si and PtSi in sequence. Scanning electron microscope revealed the morphological change in the platinum layer (formation of droplets) at 800 °C. The particle induced X-ray emission analysis showed the variation of platinum intensity, in the droplets areas, between 1600 and 2000 counts. The surrounding areas are left almost uncovered due to platinum film dewetting. In-plane as well as out-of-plane silicon nanowires were observed to form at 800 °C and 1000 °C using pulsed laser ablation and thermal annealing techniques, respectively.