کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039540 | 1518612 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature atomic layer deposited Al2O3 on CH3NH3PbI3 characterized by synchrotron-based X-ray photoelectron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
An ultrathin Al2O3 film deposited on methylammonium lead triiodide (CH3NH3PbI3) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency and stability. However, annealing at temperatures higher than 85 °C degrades the CH3NH3PbI3 perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al2O3 by atomic layer deposition on the perovskite at room temperature, however, besides pure Al2O3 some OH groups are found and the creation of lead and iodine oxides at the Al2O3/CH3NH3PbI3 interface takes place.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 411, 15 November 2017, Pages 49-52
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 411, 15 November 2017, Pages 49-52
نویسندگان
MaÅgorzata Kot, Chittaranjan Das, Karsten Henkel, Konrad Wojciechowski, Henry J. Snaith, Dieter Schmeisser,