کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039659 | 1518638 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Swift heavy ion irradiation induced electrical degradation in deca-nanometer MOSFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In this work, degradation of the electrical characteristics of 65Â nm nMOSFETs under swift heavy ion irradiation is investigated. It was found that a heavy ion can generate a localized region of physical damage (ion latent track) in the gate oxide. This is the likely cause for the increased gate leakage current and soft breakdown (SBD) then hard breakdown (HBD) of the gate oxide. Except in the case of HBD, the devices retain their functionality but with degraded transconductance. The degraded gate oxide exhibits early breakdown behavior compatible with the model of defect generation and percolation path formation in the percolation model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 383, 15 September 2016, Pages 160-163
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 383, 15 September 2016, Pages 160-163
نویسندگان
Yao Ma, Zhimei Yang, Min Gong, Bo Gao, Yun Li, Wei Lin, Jinbo Li, Zhuohui Xia,