Multi-GeV electron and positron channeling in bent silicon crystals

The planar channeling of 3…20 GeV electrons and positrons in bent Si(1 1 1) crystal was simulated by means of the MBN Explorer software package. The results of the simulations are analyzed in terms of dechanneling length characterization, angular distribution of outgoing projectiles and radiation spectrum. The results of calculations are compared with the recent experimental data.