کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8040733 | 1518664 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurements of coherent interactions of 400Â GeV protons in silicon bent crystals
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Within UA9 Collaboration bent silicon crystals has been irradiated by 400Â GeV proton beams at the H8 line of the CERN SPS North Area. Proton-crystal interactions were investigated by analyzing the particle trajectories hitting the crystal. 26 crystals were tested and 10 of them used to extract key crystal properties, such as bending angle, channeling efficiency and so on. A statistical analysis of the results is presented. The results provide experimental data to be used for an exhaustive comparison with simulation routines.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 355, 15 July 2015, Pages 369-373
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 355, 15 July 2015, Pages 369-373
نویسندگان
Roberto Rossi, Gianluca Cavoto, Daniele Mirarchi, Stefano Redaelli, Walter Scandale,