کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8040892 1518665 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11 MeV C603+ impacts
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11 MeV C603+ impacts
چکیده انگلیسی
Gold nanoparticles with an average diameter of 3.6 nm were deposited on amorphous silicon nitride (a-SiN) films. These samples were irradiated with 1.11 MeV C603+ ions to a fluence of ∼5 × 1010 ions/cm2 and observed using transmission electron microscopy (TEM). The ion tracks were clearly seen as bright spots and the gold nanoparticles disappeared from a surface area with a diameter of ∼20 nm around each ion track. The disappeared nanoparticles were collected by a foil placed in front of the sample. Gold particles of circular shape with a diameter of several nm were observed on the collector foil using TEM, suggesting that the gold nanoparticles were emitted as liquid droplets from the a-SiN film upon impact of the C60 ion. In view of the previous molecular dynamics simulations (Anders et al., 2009), this indicates that the surface temperature rises above the melting point of gold in the region with a diameter of ∼20 nm around the ion impact position.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 354, 1 July 2015, Pages 183-186
نویسندگان
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