Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means

Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×1016) e/cm2. Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters.