کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8041770 | 1518689 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation damage effects on double-junction GaInP2/GaAs solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Radiation damage effects on double-junction GaInP2/GaAs solar cells Radiation damage effects on double-junction GaInP2/GaAs solar cells](/preview/png/8041770.png)
چکیده انگلیسی
The radiation effects on a double-junction GaInP2/GaAs solar cell were studied under exposures of 100Â keV protons, 10Â MeV protons and 1Â MeV electrons, in terms of changes on electrical properties and spectral response. The results indicate that the electrical property degradation of the double-junction GaInP2/GaAs solar cell under irradiation occurs mainly due to the damage in the GaAs sub-cell. The GaAs sub-cell damage is primarily attributed to the decrease in collection efficiency of the minority carriers coming from its base bottom. It is revealed from the cell behavior under exposure to 100Â keV protons irradiation that under the AM0 illumination, there is no obvious damage defected in the tunnel junction between the GaInP2 and the GaAs sub cells. In addition, the tunnel junction between the GaInP2 and the GaAs sub-cells is stable and no boundary traps are formed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 330, 1 July 2014, Pages 76-81
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 330, 1 July 2014, Pages 76-81
نویسندگان
Wang Yueyuan, Hu Jianmin, Wu Yiyong, Xu Jianwen, Lu Jianfeng, Zhao Huijie, Qian Bin,