Investigation of deep implanted carbon and oxygen channeling profiles in [1Â 1Â 0] silicon, using d-NRA and SEM

In the present work, 4 MeV 12C2+ and 5 MeV 16O2+ ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of ∼1017 particles/cm2, in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the 12C(d,p0) and 16O(d,p0,α0) reactions respectively, at Ed,lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.