کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8042253 | 1518702 | 2013 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic relocation in ion-bombarded ultra-thin films analyzed with sub-nm spatial resolution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The displacement of atoms in a magnetic trilayer Fe (10Â nm)/Cr (0.7Â nm)/Fe (10Â nm) system by 30Â keV Ga+ ion irradiation was studied by 3D Atom Probe Tomography (APT). From APT, the positions of individual Cr and Fe atoms could be located with sub-nm spatial resolution, both before and after ion bombardment. In the pristine specimen the presence of the 0.7-nm Cr layer was identified and individual lattice planes with a distance of â¼0.15Â nm were observed which would correspond to the monolayer spacing of the Fe lattice, in agreement with the growth process. Upon irradiation, the Cr layer broadens to â¼1.2Â nm at a fluence of 3Â ÃÂ 1014Â Ga+/cm2 and to â¼3.4Â nm at 3Â ÃÂ 1015Â Ga+/cm2. From this broadening the mean squared relocation distance of (Cr) atoms was derived, ãr2ã â¼0.4Â nm2. Computer simulations indicate that, at a fluence of 3Â ÃÂ 1014Â Ga+/cm2, each Cr atom in the intermediate layer is displaced on average once in the collision processes. The distribution of implanted Ga ions appears to exhibit discontinuities at the Fe/Cr interfaces which might be caused by a demixing of Ga at the Cr layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 315, 15 November 2013, Pages 126-130
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 315, 15 November 2013, Pages 126-130
نویسندگان
Hubert Gnaser, Rüdiger Schiller, Michael Wahl, Bernhard Reuscher,