کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8042781 | 1518711 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Application of stencil masks for ion beam lithographic patterning
ترجمه فارسی عنوان
استفاده از ماسک های استنسیل برای الگوی لیتوگرافی پرتوهای یونی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
The application of Au/Si3N4 stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist polymers, oxygen ion-induced etching of PTFE and patterning using an etch-stop in silicon. We demonstrate that using different well-known microtechnology material-modification techniques, patterns can be transferred using stencil masks and broad ion beams to nanomachining scenarios. In the case of the etch-stop process; writing of 3D micropatterns with different height levels was achieved using a broad beam. The stencil masks were found to be durable with no obvious deterioration and well suited for exposure of large areas.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 306, 1 July 2013, Pages 292-295
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 306, 1 July 2013, Pages 292-295
نویسندگان
S. Brun, V. Savu, S. Schintke, E. Guibert, H. Keppner, J. Brugger, H.J. Whitlow,