کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044015 | 1518915 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anomalous electrical bistability in lateral grain rich polycrystalline molybdenum disulfide thin films
ترجمه فارسی عنوان
بیومسئولید الکتریکی بیومتریک در فیلم های نازک مولیبدن دی سولفید پلی کریستالی غلیظ
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Lateral-grain- rich polycrystalline MoS2 films have been prepared using sulfurization of the Mo-coated glass substrate. The goal of such synthesis is to achieve electrical bistability without fabricating a sandwiched structure that generally utilizes other materials, such as graphene or N-vinylcarbazole. These films show a symmetrical three-stage electrical behavior that follows a different charge transport mechanism. In a single voltage sweep, both on and off stages appear. The intermediate stage obeys a trap-controlled space charge limited current mechanism, whereas the ON stage follows a Schottky emission model. The overall charge transport mechanism was explained on the basis of contributions from dangling bonds, stoichiometric defects, atmospheric adsorbates, s-vacancies, and free charge carriers. Under an assumption of the high contribution of the leakage current, the simulated I-V curve shows two different sections. Such a trend was observed in the experimental I-V curves.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 155, September 2018, Pages 667-674
Journal: Vacuum - Volume 155, September 2018, Pages 667-674
نویسندگان
Prashant K. Sarswat, Pankaj Kumar, Michael L. Free,