کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044201 | 1518915 | 2018 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Au nanoparticles on the optical and electrical properties of Nb-doped β-Ga2O3 film
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The Nb-doped β-Ga2O3 (β-Ga2O3:Nb) thin films have been deposited on the p-Si and Au nanoparticles decorated p-Si substrates by radio frequency magnetron technique in argon ambient. All the annealed β-Ga2O3:Nb films are composed of similar crystallite sizes obtained by XRD and SEM measurements. The β-Ga2O3:Nb thin film grown on the Au nanoparticles decorated substrate shows lower transmittance and narrower band gap compared to that of grown on p-Si reference substrate. Photoluminescence intensity was quenched because of the short separation distance between semiconductor and the Au nanoparticles. The current density was enhanced and the barrier height of the β-Ga2O3:Nb/p-Si heterojunction was reduced by inserting Au nanoparticles in the interface of β-Ga2O3:Nb/p-Si heterojunction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 155, September 2018, Pages 465-469
Journal: Vacuum - Volume 155, September 2018, Pages 465-469
نویسندگان
Hao Zhang, Jinxiang Deng, Ping Duan, Ruidong Li, Zhiwei Pan, Zhiying Bai, Le Kong, Jiyou Wang,